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industrial & multimarket data sheet rev. 2.0, 2010-10-01 final coolmos cp 600v coolmos? cp power transistor IPL60R299CP mosfet metal oxide semiconductor field effect transistor
bottom view drain pin 4 gate pin 1 power source pin 3 driver source pin 2 600v coolmos? cp power transistor IPL60R299CP final data sheet 2 rev. 2.0, 2010-10-01 1 description the coolmos? cp series offers devices which provide all benefits of a fast switching sj mosfet while not sacrificin g ease of use. extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. thinpak thinpak is a a new leadless smd package for hv mosfets. the new package has a very small footprint of only 64mm2 (vs. 150mm2 for the d 2 pak) and a very low profile with only 1mm height (vs. 4.4mm for the d 2 pak). the significantly smaller pa ckage size, combined with benchmark low parasitic inductances, provides designers with a new and effective way to decrease system solution size in power-density driven designs. features ? reduced board space consumption ? increased power density ? short commutation loop ? smooth switching waveform ? easy to use products ? extremely low losses due to very low fom r dson *q g and e oss ? quallfied according to jedec 1) for target applications (server, adapter) ? pb-free plating, halogen free applications: server, adapter 1) j-std20 and jesd22 table 1 key performance parameters parameter value unit related links v ds @ t j,max 650 v ifx cp product brief r ds(on),max 0.299 ? i fx cp portfolio q g,typ 22 nc ifx thinpak webpage i d,pulse 34 a ifx design tools e oss @ 400v 4.2 j body diode d i /d t 200 a/s type package marking IPL60R299CP pg-vson-4 6r299p
600v coolmos? cp power transistor IPL60R299CP table of contents final data sheet 3 rev. 2.0, 2010-10-01 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table of contents
600v coolmos? cp power transistor IPL60R299CP maximum ratings final data sheet 4 rev. 2.0, 2010-10-01 2 maximum ratings at t j = 25 c, unless otherwise specified. 3 thermal characteristics table 2 maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current 1) 1) limited by t j,max. maximum duty cycle i d --11.1 a t c = 25 c 7 t c = 100c pulsed drain current 2) 2) pulse width t p limited by t j,max i d,pulse --34 a t c =25 c avalanche energy, single pulse e as --290 mj i d =4.4 a, v dd =50 v (see table 17) avalanche energy, repetitive 2)3) 3) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f . e ar - - 0.44 i d =4.4 a, v dd =50 v avalanche current, repetitive 2)3) i ar --4.4 a mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480 v gate source voltage v gs -20 - 20 v static -30 30 ac (f>1 hz) power dissipation p tot --96 w t c =25 c operating temperature t j -40 - 150 c storage temperature t stg -40 - 125 c continuous diode forward current i s --11.1 a t c =25 c diode pulse current 2) i s,pulse --34 a t c =25 c reverse diode dv/dt 4) 4) identical low side and high side switch with identical r g dv/dt - - 15 v/ns v ds =0...400 v, i sd ? i d , t j =25 c maximum diode commutation speed 4) di f /dt - - 200 a/s (see table 18) table 3 thermal characteristics parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc -- 1.3c/w thermal resistance, junction - ambient r thja - - 45 smd version, device on pcb, 6cm 2 cooling area 1) 1) device on 40mm*40mm*1.5mm one layer epoxy pcb fr4 with 6cm 2 copper area (thickness 70m) for drain connection. pcb is vertical without air stream cooling. reflow soldering temperature t sold - - 260 c reflow msl 3
600v coolmos? cp power transistor IPL60R299CP electrical characteristics final data sheet 5 rev. 2.0, 2010-10-01 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified. table 4 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 600 - - v v gs =0 v, i d =0.25 ma gate threshold voltage v gs(th) 2.5 3 3.5 v ds = v gs , i d =0.44 ma zero gate voltage drain current i dss -- 1a v ds =600 v, v gs =0 v, t j =25 c -10- v ds =600 v, v gs =0 v, t j =150 c gate-source leakage current i gss - - 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) - 0.27 0.299 ? v gs =10 v, i d =6.6 a, t j =25 c -0.70- v gs =10 v, i d =6.6 a, t j =150 c gate resistance r g -1.9- ? f =1 mhz, open drain table 5 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss -1100- pf v gs =0 v, v ds =100 v, f =1 mhz output capacitance c oss -60- effective output capacitance, energy related 1) 1) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss c o(er) -46- v gs =0 v, v ds =0...480 v effective output capacitance, time related 2) 2) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss c o(tr) -120- i d =constant, v gs =0 v v ds =0...480v turn-on delay time t d(on) -10- ns v dd =400 v, v gs =13 v, i d =6.6 a, r g =4.3 ?? ? see table 16) rise time t r -5- turn-off delay time t d(off) -40- fall time t f -5-
600v coolmos? cp power transistor IPL60R299CP electrical characteristics final data sheet 6 rev. 2.0, 2010-10-01 table 6 gate charge characteristics parameter symbol values unit note / test condition min. typ. max. gate to source charge q gs -5- nc v dd =480 v, i d =6.6 a, v gs =0 to 10 v gate to drain charge q gd -8- gate charge total q g -22- gate plateau voltage v plateau -5- v table 7 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode forward voltage v sd -0.9- v v gs =0 v, i f =6.6 a, t j =25 c reverse recovery time t rr -300- ns v r =400 v, i f =6.6 a, d i f /d t =100 a/s (see table 18) reverse reco very charge q rr -3.9- c peak reverse recovery current i rrm -26- a
600v coolmos? cp power transistor IPL60R299CP electrical characteristics diagrams final data sheet 7 rev. 2.0, 2010-10-01 5 electrical characteristics diagrams table 8 power dissipation max. transient thermal impedance p tot = f( t c ) z (thjc) =f(tp); parameter: d=t p /t table 9 safe operating area t c =25 c safe operating area t c =80 c i d =f(v ds ); t c =25 c; d=0; parameter t p i d =f(v ds ); t c =80 c; d=0; parameter t p
600v coolmos? cp power transistor IPL60R299CP electrical characteristics diagrams final data sheet 8 rev. 2.0, 2010-10-01 table 10 typ. output characteristics t j =25 c typ. output characteristics t j =125 c i d =f( v ds ); t j =25 c; parameter: v gs i d =f( v ds ); t j =125 c; parameter: v gs table 11 typ. drain-source on-state resistance drain-source on-state resistance r ds(on) =f( i d ); t j =125 c; parameter: v gs r ds(on) =f( t j ); i d =6.6 a; v gs =10 v
600v coolmos? cp power transistor IPL60R299CP electrical characteristics diagrams final data sheet 9 rev. 2.0, 2010-10-01 table 12 typ. transfer characteristics typ. gate charge i d =f( v gs ); v ds =20v v gs =f( q gate ), i d =6.6 a pulsed table 13 avalanche energy drain-source breakdown voltage e as =f( t j ); i d =4.4 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma
600v coolmos? cp power transistor IPL60R299CP electrical characteristics diagrams final data sheet 10 rev. 2.0, 2010-10-01 table 14 typ. capacitances typ. c oss stored energy c=f( v ds ); v gs =0 v; f =1 mhz e oss =f( v ds ) table 15 forward characteristics of reverse diode i f =f( v sd ); parameter: t j
600v coolmos? cp power transistor IPL60R299CP test circuits final data sheet 11 rev. 2.0, 2010-10-01 6 test circuits table 16 switching times test circui t and waveform for inductive load switching times test circuit for i nductive load switching time waveform table 17 unclamped inductive load test circuit and waveform unclamped inductive load test circuit unclamped inductive waveform table 18 test circuit and waveform for diode characteristics test circuit for diode characteristics diode recovery waveform v ds v gs v ds v gs t d(on) t d( o f f) t r t on t f t off 10% 90% v ds i d v ds v d v (br)ds i d v ds v ds i d r g1 r g2 r g1 = r g2 f d it /d t rr 10% 90% rrm rrm t rrm v sil00088 q f v i f q s rrm v s tt f /d i d rr t rr tt s t f =+ = rr qq sf + q
600v coolmos? cp power transistor IPL60R299CP package outlines final data sheet 12 rev. 2.0, 2010-10-01 7 package outlines figure 1 outlines thinpak 8x8, dimensions in mm/inches
600v coolmos? cp power transistor IPL60R299CP revision history final data sheet 13 rev. 2.0, 2010-10-01 8 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2010-10-01 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. with respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including wit hout limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for in formation on the types in question, please contact the neares t infineon technologies office. infineon technologies components may be used in life-suppo rt devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or sys tem. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if t hey fail, it is reasonable to assume that the health of the user or other persons may be endangered. revision history: 2010-10-01, rev. 2.0 previous revision: page subjects (major cha nges since last revision) 2.0 release of final data sheet

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